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[[https://en.wikipedia.org/wiki/Insulated-gate_bipolar_transistor|
Insulated-gate bipolar transistor]]


 

An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to combine high efficiency with fast switching. It consists of four alternating layers (P–N–P–N) that are controlled by a metal–oxide–semiconductor (MOS) gate structure.

Although the structure of the IGBT is topologically similar to a thyristor with a "MOS" gate (MOS-gate thyristor), the thyristor action is completely suppressed, and only the transistor action is permitted in the entire device operation range. It is used in switching power supplies in high-power applications: variable-frequency drives (VFDs), uninterruptible power supply systems (UPS), electric cars, trains, variable-speed refrigerators, lamp ballasts, arc-welding machines, induction hobs, and air conditioners.

Since it is designed to turn on and off rapidly, the IGBT can synthesize complex waveforms with pulse-width modulation and low-pass filters, thus it is also used in switching amplifiers in sound systems and industrial control systems. In switching applications modern devices feature pulse repetition rates well into the ultrasonic-range frequencies, which are at least ten times higher than audio frequencies handled by the device when used as an analog audio amplifier. As of 2010, the IGBT was the second most widely used power transistor, after the power MOSFET.[citation needed] 




[[https://library.e.abb.com/public/d746404db02cd15683257b5f004a8e33/Anouncement_StakPak.pdf|
ABB introduces StakPak, the industry’s most powerful IGBT]]

ABB’s new release, the StakPak module rated at 4500V, is the most powerful IGBT on the
market. With nominal currents of 1300A and 2000A and featuring the established StakPak
press-pack technology, the StakPak is an ideal fit where series connection, exceptional power
and reliability are required.
The StakPak features an integrated free-wheeling diode and is available in IGBT to diode area
ratios of 2:1 or 1:1, where high diode performance is required. The unique pressure contact
technology with individual spring contacts for each IGBT/diode chip allows for easy
mounting even in large stacks, due to Stakpak’s excellent pressure tolerance.
In case of an IGBT or diode failure, the StakPak fails into a stable short-circuit, making it
ideally suited for reliable series connection and redundant operation